Impurity Compensation and Magnetoresistance in p-Type Silicon

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Abstract
A new method is proposed for determining the separate concentrations of acceptor and donor impurities in crystals of p‐type silicon, and thereby the degree of compensation of acceptors by donors. The method involves finding the total concentration of impurities in a sample from a measurement of the weak‐field transverse magnetoresistance at 77°K and combining this result with the excess of acceptors over donors determined from a room‐temperature resistivity or Hall effect measurement. An empirical ``master curve'' of magnetoresistance vs impurity density has been constructed for this purpose. The impurity densities for the master curve were measured by the usual method of fitting a theoretical carrier concentration vs temperature equation to an experimental curve obtained from Hall effect data.