Changes in the electrical properties of GaAs due to electron irradiation
- 15 January 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 604-606
- https://doi.org/10.1063/1.334744
Abstract
The carrier removal rates and the minority carrier diffusion length changes due to 1‐MeV electron irradiation have been measured for n‐ and p‐type GaAs single crystals. Initial carrier concentration and conductivity‐type effects on the electrical properties in the irradiated GaAs are clarified. These results can be well explained by taking into account the electron irradiation‐induced electron and hole traps identified in previous work.This publication has 4 references indexed in Scilit:
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- Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage ThresholdsPhysical Review B, 1958