Transient radiation study of GaAs metal semiconductor field effect transistors implanted in Cr-doped and undoped substrates

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Abstract
Flash x-ray measurements have been made on GaAs metal semiconductor field effect transistor structures fabricated in both Cr-doped and undoped semi-insulating substrate material in order to characterize the levels responsible for long term transients in these devices. Prominent electron and hole traps with activation energies in the 0.76–0.90-eV range have been identified. The main electron trap, which is present in both Cr-doped and undoped substrates, appears to be primarily responsible for the observed transient response. However, traps related to Cr-doping also contribute to the transient behavior.