Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ Structures
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1502-1507
- https://doi.org/10.1109/tns.1984.4333538
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Channel and Substrate Currents in GaAs FETS Due to Ionizing RadiationIEEE Transactions on Nuclear Science, 1983
- Transient Radiation Effects at X-Band in GaAs FETs and ICsIEEE Transactions on Nuclear Science, 1983
- Backgating in GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- Transient radiation study of GaAs metal semiconductor field effect transistors implanted in Cr-doped and undoped substratesJournal of Applied Physics, 1981