Transient Radiation Effects at X-Band in GaAs FETs and ICs
Open Access
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4205-4208
- https://doi.org/10.1109/tns.1983.4333109
Abstract
Transient radiation effects following 20-60 ns electron pulses were measured in GaAs FETs and ICs operating at X-band. Long-term transients in RF output power and drain current were observed in all devices and ICs except FETs fabricated with a buried p-layer. Only the prompt (20 ns) photocurrent response was observed in FETs with a buried p-layer. The long-term transients are explained by a model of substrate trapping and backgating.Keywords
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