Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETs
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1533-1538
- https://doi.org/10.1109/tns.1982.4336399
Abstract
The long-term transient radiation response in ion implanted GaAs FETs induced by flash x-ray or electron pulses has been reduced by the incorporation of a deep buried p-layer beneath the active n-layer. Reductions in the change in drain current of up to two orders of magnitude were measured in FETs with the buried p-layer compared to FETs with only an n-implanted channel following a 100 rad x-ray pulse. This improvement in radiation tolerance is attributed to shielding of the active n-layer by the conducting p-layer from the effects of radiation induced trapped substrate charge.Keywords
This publication has 4 references indexed in Scilit:
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