Selective MOCVD epitaxy for optoelectronic devices
- 1 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 229-234
- https://doi.org/10.1016/0022-0248(81)90292-x
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- GaAs double heterostructure lasers fabricated by wet chemical etchingJournal of Applied Physics, 1976
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975