GaAs double heterostructure lasers fabricated by wet chemical etching
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (8) , 3503-3509
- https://doi.org/10.1063/1.323191
Abstract
GaAs double heterostructure lasers compatible with monolithic intergration of optical devices have been fabricated by wet chemical etching. Results for a variety of laser orientations are reported. External differential quantum efficiencies as high as 18% have been achieved, as well as threshold current densities as low as 4.2 kA/cm2. An analysis for the evaluation of etched‐mirror properties is presented. Using this analysis, it was found that etched mirrors had reflectivity R?0.22±0.05 and scattering losses S=0.3±0.1.This publication has 15 references indexed in Scilit:
- Integrated GaAs-AlGaAs double-heterostructure lasersApplied Physics Letters, 1975
- GaAs-GaAlAs distributed-feedback diode lasers with separate optical and carrier confinementApplied Physics Letters, 1975
- Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedbackApplied Physics Letters, 1975
- GaAs-AlxGa1-xAs injection lasers with distributed Bragg reflectorsApplied Physics Letters, 1975
- Integrated GaAs-AlxGa1-xAs double-heterostructure laser with independently controlled optical output divergenceIEEE Journal of Quantum Electronics, 1975
- GaAs-AlGaAs double heterostructure lasers with taper-coupled passive waveguidesApplied Physics Letters, 1975
- Monolithic GaAs injection mesa lasers with grown optical facetsApplied Physics Letters, 1974
- Optically pumped grown GaAs mesa surface laserApplied Physics Letters, 1974
- The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] SolutionJournal of the Electrochemical Society, 1973
- Preferential Etching and Etched Profile of GaAsJournal of the Electrochemical Society, 1971