Integrated GaAs-AlGaAs double-heterostructure lasers
- 15 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (4) , 241-243
- https://doi.org/10.1063/1.88408
Abstract
Integrated structures consisting of a double‐heterostructure GaAs‐AlGaAs etched‐mesa Fabry‐Perot laser coupled to a high‐purity GaAs waveguide have been fabricated and tested. Room‐temperature threshold current densities as low as 7.5 kA/cm2 for 1‐μm‐thick active layers were measured.Keywords
This publication has 14 references indexed in Scilit:
- Distributed-Feedback Double-Heterostructure GaAs Injection Laser with Fundamental GratingApplied Optics, 1974
- Electroabsorption avalanche photodiodesApplied Physics Letters, 1974
- Monolithically integrated AlGaAs double heterostructure optical componentsApplied Physics Letters, 1974
- Monolithic GaAs injection mesa lasers with grown optical facetsApplied Physics Letters, 1974
- Distributed Feedback GaAs Homojunction Injection LaserApplied Optics, 1974
- Principles of distributed feedback and distributed Bragg-reflector lasersIEEE Journal of Quantum Electronics, 1974
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974
- Electroabsorption in Aly Ga1−y As–Alx Ga1−x As double heterostructuresApplied Physics Letters, 1973
- Preferential Etching and Etched Profile of GaAsJournal of the Electrochemical Society, 1971
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970