Transition to faceting in multilayer liquid phase epitaxy of GaAs
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 70-73
- https://doi.org/10.1063/1.91705
Abstract
During deposition of p‐ and n‐GaAs multilayers by a novel liquid phase epitaxy (LPE) technique on slightly misoriented substrates, a gradual transition from macroscopically steped surfaces to faceting has been observed. The change from various different growth mechanisms on corrugated LPE‐grown surfaces to a single one with propagating steps of heights of the order of 10 Å leads to extremely flat surfaces and to improved homogeneous dopant incorporation. These factors are likely to increase the performance of optoelectronic and microwave devices.Keywords
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