Minimization of dopant-induced random potential fluctuations in sawtooth doping superlattices

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Abstract
Potential fluctuations due to random dopant distribution are estimated in a doping superlattice for different doping profiles. It is shown that statistical potential fluctuations are minimized by employing a doping profile consisting of a train of δ functions, which result in sawtooth-shaped band edges. Clearly resolved quantum-confined optical absorption and luminescence transitions are observed in this improved doping superlattice structure. The sawtooth superlattice provides the basis for a novel GaAs technology which is suited to operate in the minimum dispersion region of silica fibers at a wavelength of λ=1.3 μm.