GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm
- 1 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 219-221
- https://doi.org/10.1063/1.96223
Abstract
A new type of semiconductor superlattice laser grown by molecular beam epitaxy is realized in GaAs. The active region of the injection laser consists of alternating n and p Dirac-delta doped layers resulting in a sawtooth-shaped conduction-band and valence-band edge. The band gap of this new GaAs superlattice is smaller than the GaAs bulk band gap. Room-temperature operation of broad-area GaAs sawtooth superlattice (STS) injection lasers is demonstrated at a wavelength of 905 nm. The threshold current density of the STS laser is 2.2 kA/cm2.Keywords
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