Ion-implantation doping of semiconductors

This publication has 20 references indexed in Scilit:

• Conversion of crystalline germanium to amorphous germanium by ion bombardment
  Philosophical Magazine, 1965
• Silicon heavily doped by energetic cesium ions
  Journal of Physics and Chemistry of Solids, 1963
• Experimental Evidence for the Increase of Heavy Ion Ranges by Channeling in Crystalline Structure
  Physical Review Letters, 1963
• Junction Formation in Silicon by Positive Ion Bombardment
  IEEE Transactions on Nuclear Science, 1963
• THE CHANNELING OF ENERGETIC ATOMS IN CRYSTAL LATTICES
  Applied Physics Letters, 1963
• Crystal ``Doping'' by Ion Bombardment
  Review of Scientific Instruments, 1961
• THE RANGE OF ALKALI METAL IONS OF KILOELECTRON VOLT ENERGIES IN ALUMINUM
  Canadian Journal of Chemistry, 1960
• Damage to Silicon Produced by Bombardment with Helium Ions
  Journal of Applied Physics, 1957
• Effects Produced by the Ionic Bombardment of Germanium
  Proceedings of the Physical Society. Section B, 1955
• Properties of Ionic Bombarded Silicon
  Bell System Technical Journal, 1952