Photoluminescence properties of nitrogen-doped ZnSe grown by molecular-beam epitaxy
- 3 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (1) , 91-93
- https://doi.org/10.1063/1.110878
Abstract
This letter reports the photoluminescence (PL) properties of N‐doped ZnSe epilayers grown by molecular‐beam epitaxy using a microwave plasma source for N doping. The temperature dependence of PL spectra from N‐doped ZnSe epilayers with different net acceptor concentrations is described in detail. The emission due to transition from deep donors to free holes (DdF) is observed from highly N‐doped ZnSe epilayers at high temperatures, which gives a direct evidence for the formation of a deep N‐associated donor. The ionization energy for a deep N‐associated donor is estimated as 55±5 meV from comparison of the temperature dependence of the DdF emission energy with that of the free exciton energy.Keywords
This publication has 14 references indexed in Scilit:
- P-Type ZnSe:N Prepared by Electron Cyclotron Resonance Radical Beam Doping during Molecular Beam Epitaxial GrowthJapanese Journal of Applied Physics, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- Pair Spectra and the Shallow Acceptors in ZnSePhysical Review B, 1973
- Optical Studies of Shallow Acceptors in CdS and CdSePhysical Review B, 1971
- Angular Momentum Theory and Localized States in Solids. Investigation of Shallow Acceptor States in SemiconductorsPhysical Review Letters, 1970
- Excitons and the Absorption Edge in ZnSePhysical Review B, 1967