P-Type ZnSe:N Prepared by Electron Cyclotron Resonance Radical Beam Doping during Molecular Beam Epitaxial Growth
- 1 February 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (2B) , L233
- https://doi.org/10.1143/jjap.32.l233
Abstract
ZnSe doped with nitrogen(N) has been prepared by molecular beam epitaxy using N2 *, N* nitrogen radicals, N2 + ions and N atoms from an electron cyclotron resonance nitrogen plasma source. N-doped ZnSe/GaAs heteroepitaxial layers showed p-type conduction with net acceptor concentrations as high as 1.8×1018 cm-3, and the activation rate of N atoms was 60%. Photoluminescence spectra measured at 7 K from p-type ZnSe:N layers with net acceptor concentrations higher than 1018 cm-3 were dominated by two different donor-acceptor pair emission bands with zero phonon energies of 2.684 eV and 2.697 eV.Keywords
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