Non-contact electrical characterization of low-resistivity p-type ZnSe:N grown by molecular beam epitaxy
- 7 October 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (15) , 1896-1898
- https://doi.org/10.1063/1.106181
Abstract
The resistivity of p‐type ZnSe:N/GaAs heteroepitaxial layers grown by molecular beam epitaxy using a nitrogen free‐radical source has been determined as a function of both substrate temperature and the Zn‐to‐Se beam equivalent pressure (BEP) ratio employed during growth. Layer resistivities were determined using a noncontact inductive‐coupling radio‐frequency measurement technique that provided sheet conductivity data from which layer resistivities were calculated. A minimum resistivity of 0.75 Ω cm has been measured to date for p‐type ZnSe:N material grown at 235 °C with a BEP ratio of 1:2. Such a resistivity would imply a free‐hole density in the range 4×1017−8×1017 cm−3 assuming the hole mobility to be in the range 20−10 cm2 V−1 s−1, respectively.Keywords
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