p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
- 12 November 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (20) , 2127-2129
- https://doi.org/10.1063/1.103919
Abstract
A novel approach to producing p-type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4×1017 cm−3 have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, light-emitting diodes based on ZnSe:N/ZnSe:Cl, p-n homojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.Keywords
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