Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4A) , L528
- https://doi.org/10.1143/jjap.28.l528
Abstract
Electroluminescence has been obtained from ZnSe p-n junctions. ZnSe films were grown on n-type GaAs substrates by molecular beam epitaxy. The dopant used for n-type ZnSe was Ga, and p-type ZnSe was formed by nitrogen ion implantation into undoped ZnSe which was grown on the Ga-doped ZnSe layer. Rapid thermal annealing was performed using an infrared lamp in N2 ambient. The formation of a p-n junction was confirmed by measuring electron beam-induced current. The electroluminescence spectra were dominated by two peaks of band-edge emission at 446 and 459 nm at 77 K.Keywords
This publication has 10 references indexed in Scilit:
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Ionization energy of the shallow nitrogen acceptor in zinc selenidePhysical Review B, 1983
- Shallow N acceptor in N+-implanted ZnSeApplied Physics Letters, 1982
- Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor depositionApplied Physics Letters, 1982
- Blue electroluminescence from ZnSe diodesJournal of Applied Physics, 1977
- Injection electroluminescence in phosphorous-ion-implanted ZnSe p-n junction diodesJournal of Applied Physics, 1974