Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy
- 1 May 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (5A) , L909
- https://doi.org/10.1143/jjap.27.l909
Abstract
Nitrogen-doped ZnSe layers have been grown on (100) GaAs substrates by metalorganic vapor phase epitaxy using NH3 as the doping material. The N-doped layers exhibit a strong free-to-acceptor transition emission at 77 K and a strong acceptor bound-exciton emission line at 15 K. The layers with a high doping level, which exhibit broader excitonic emission lines, indicate p-type conduction with low resistivities from 102 to 103 Ω·cm, carrier concentrations of the order of 1014 cm-3 and mobilities from 20 to 50 cm2/Vs. Current-voltage characteristics of the N-doped ZnSe/n-GaAs heterojunctions conform to the p-type conduction.Keywords
This publication has 8 references indexed in Scilit:
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited ConditionJapanese Journal of Applied Physics, 1987
- Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion dopingApplied Physics Letters, 1986
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Characterization of ZnSe grown by molecular-beam epitaxyJournal of Crystal Growth, 1985
- Photoluminescence properties of nitrogen-doped ZnSe grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)Physica Status Solidi (a), 1984
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982