Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping
- 17 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (20) , 1348-1350
- https://doi.org/10.1063/1.97374
Abstract
Low‐energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p‐type crystals. Low‐temperature photoluminescence (PL) measurements of the N‐doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound‐exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.Keywords
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