High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition
- 1 August 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (8R)
- https://doi.org/10.1143/jjap.26.1305
Abstract
The effects of the growth conditions on the growth rate, crystallographic and luminescence properties were investigated for ZnSe film growth by metalorganic vapor phase epitaxy at 0.1 atm using diethylzinc and H2Se. It was shown that high-quality epitaxial layers can be grown under the diethylzinc diffusion-limited condition over temperatures ranging from 250 to 500°C. These layers exhibit dominant blue photoluminescence at 77 K. However, the optimum growth temperature for ZnSe layers having a smooth surface and high crystallographic properties is restricted to within the region between 300 and 400°C.Keywords
This publication has 15 references indexed in Scilit:
- Growth Mechanism of ZnS and ZnSe Films in Low-Pressure MOCVDJapanese Journal of Applied Physics, 1986
- Characterization of ZnSe grown by molecular-beam epitaxyJournal of Crystal Growth, 1985
- Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPEJournal of Crystal Growth, 1985
- Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1985
- Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpeJournal of Crystal Growth, 1985
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1984
- Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)Physica Status Solidi (a), 1984
- MOCVD growth of ZnSe films using diethylselenideJournal of Crystal Growth, 1984
- Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature EffectJapanese Journal of Applied Physics, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982