Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L424
- https://doi.org/10.1143/jjap.23.l424
Abstract
Effects of growth conditions, especially substrate temperature, on the electrical and photoluminescence properties of nominally undoped ZnSe films grown on GaAs substrates by low-pressure MOCVD have been studied. It has been shown that the substrate temperature remarkably affects the electrical and photoluminescence characteristics of films. It was found that high conductivity ZnSe films can be grown without intentional doping, and that high-quality ZnSe films involving low-concentration electron-scattering centers and exhibiting a strong blue near-band-edge emission can be grown.Keywords
This publication has 7 references indexed in Scilit:
- High-quality ZnSe thin films grown by molecular beam epitaxyApplied Physics Letters, 1983
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982
- Conduction mechanism in low-resistivity n-type ZnSe prepared by organometallic chemical vapor depositionJournal of Applied Physics, 1982
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978