Nitrogen as shallow acceptor in ZnSe grown by organometallic chemical vapor deposition

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Abstract
Thin layers of ZnSe were grown on (100) GaAs substrates by organometallic chemical vapor deposition in the presence of ammonia with the intent to incorporate nitrogen as a group V acceptor. Low-temperature photoluminescence studies confirm that nitrogen is indeed incorporated as a shallow impurity with an activation energy of between ∼110 meV. ZnSe grown in the presence of phosphine gas, on the other hand, exhibits a photoluminescence spectrum characteristic of deep impurity level. A comparison of these results with other published data suggests that both N and P are incorporated as substitutional acceptors replacing Se.