Preparation of low-resistivity n-type ZnSe by organometallic chemical vapor deposition
- 1 March 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (5) , 352-354
- https://doi.org/10.1063/1.92374
Abstract
Low‐resistivity n‐type ZnSe with pn≳1017 cm−3 has been grown epitaxially on (100) GaAs substrates by a low‐pressure low‐temperature organometallic chemical vapor deposition process. Triethylaluminum is used as a dopant. The as‐grown layers show a strong near‐band‐gap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other methods.Keywords
This publication has 8 references indexed in Scilit:
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Shallow acceptors and p-type ZnSeApplied Physics Letters, 1979
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- Luminescence in highly conductive n-type ZnSeJournal of Applied Physics, 1975
- Optical Properties of Substitutional Donors in ZnSePhysical Review B, 1972
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- Electroelastic Properties of the Sulfides, Selenides, and Tellurides of Zinc and CadmiumPhysical Review B, 1963