Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVD
- 1 January 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (1) , 95-109
- https://doi.org/10.1007/bf02654903
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The composition and temperature dependences of the fundamental band gap in ZnSxSe1−x alloysSurface Science, 1979
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- II–VI compounds in solar energy conversionJournal of Crystal Growth, 1977
- Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnSXSe1−XJournal of Applied Physics, 1974
- Variation with composition of theandgaps inalloysPhysical Review B, 1974
- Preferential Etching and Etched Profile of GaAsJournal of the Electrochemical Society, 1971
- Misfit dislocations in semiconductorsJournal of Physics and Chemistry of Solids, 1966