Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnSXSe1−X
- 1 October 1974
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (10) , 4487-4490
- https://doi.org/10.1063/1.1663075
Abstract
The temperature range of Ohmic contact formation to ZnSe, ZnS0.5 Se0.5, and ZnS is presented. New experiments show contacts are formed by cooldown rather than by heatup and that contacts can be formed and removed reversibly by cyclic cooling and heating. This and other evidence suggest contact formation by liquid‐phase epitaxy, as had been shown in group‐IV and ‐III‐V semiconductors, rather than diffusion. The role of wetting, which is necessary but not equivalent to contact formation, is discussed.This publication has 16 references indexed in Scilit:
- Resistivity and Photoluminescence of Zn(S,Se):I Annealed in Liquid ZincJournal of the Electrochemical Society, 1973
- Self‐diffusion of Zn and Se in ZnSePhysica Status Solidi (b), 1971
- Diffusion of Aluminum in the ZnSe–ZnTe SystemJournal of Applied Physics, 1970
- Metal Films Sputtered at Low VoltagesJournal of Applied Physics, 1968
- Piezoresistance and Piezo-Hall Effects in-ZnSePhysical Review B, 1968
- The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p‐Type GermaniumPhysica Status Solidi (b), 1968
- Low-temperature alloy contacts to gallium arsenide using metal halide fluxesSolid-State Electronics, 1966
- Ohmic Electrical Contacts to High-Resistivity ZnS CrystalsJournal of the Electrochemical Society, 1966
- Diffusion of Electrically and Optically Active Defect Centers in II-VI CompoundsPhysical Review B, 1965
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963