Basic physics of gaseous dielectrics
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electrical Insulation
- Vol. 25 (1) , 55-74
- https://doi.org/10.1109/14.45234
Abstract
No abstract availableThis publication has 99 references indexed in Scilit:
- Collisional cross sections of c-C4F8 and transport coefficients of c-C4F8 and N2-c-C4F8 mixturesJournal of Applied Physics, 1988
- Effect of temperature on the uniform field breakdown strength of electronegative gasesJournal of Applied Physics, 1988
- Electron attachment and ionization processes in CF4, C2F6, C3F8, and n-C4F1The Journal of Chemical Physics, 1987
- Effect of temperature on the dissociative and nondissociative electron attachment to C3F8The Journal of Chemical Physics, 1985
- Effect of temperature on the dissociative electron attachment to CClF3 and C2F6 a)The Journal of Chemical Physics, 1985
- Transport coefficients of SF6 and SF6-N2 mixtures from revised dataJournal of Applied Physics, 1984
- Development of electron avalances and streamersSoviet Physics Uspekhi, 1975
- Mobility, diffusion and attachment of electrons in perfluoroalkanesJournal of Physics D: Applied Physics, 1972
- Ionization and attachment in perfluorobutaneJournal of Physics D: Applied Physics, 1968
- Growth of ionization currents in carbon tetrafluoride and hexafluoroethaneJournal of Physics D: Applied Physics, 1968