A high-current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS)
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (10) , 452-454
- https://doi.org/10.1109/55.43097
Abstract
A silicon pseudo-heterojunction bipolar transistor (HBT) with a current gain of over 100 at 77 K has been successfully fabricated using the upward operation of a self-aligned sidewall base-contact structure (SICOS). The measured characteristics agree well with the theoretical prediction, showing a negative exponential temperature dependence of current gain and a 2500-times larger collector current than in the conventional transistor at 77 K. This makes homojunction bipolar transistor operation at low temperatures feasible and has the potential to overcome the bipolar/BiCMOS limitations.Keywords
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