Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
- 1 April 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (4) , 165-167
- https://doi.org/10.1109/55.677
Abstract
The devices were fabricated using molecular-beam epitaxy (MBE), low-temperature processing, and germanium concentrations of 0, 6%, and 12%. The transistors demonstrate current gain, and show the expected increase in collector current as a result of reduced bandgap due to Ge incorporation in the base. For a 1000-AA base device containing 12% Ge, a six-times increase in collector current was measured at room temperature, while a 1000-times increase was observed to 90 K. The temperature dependence of the collector current of the Si/sub 0.88/Ge/sub 0.12/ base transistor is consistent with a bandgap shrinkage in the base of 50 meV. For the homojunction transistors, base widths as thin as 800 AA were grown, corresponding to a neutral base width of no more than 400 AA.<>Keywords
This publication has 11 references indexed in Scilit:
- Characterization of epitaxial films by grazing-incidence X-ray diffractionThin Solid Films, 1987
- Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealingApplied Physics Letters, 1987
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981