Secondary implantation of Sb into Si molecular beam epitaxy layers
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 511-513
- https://doi.org/10.1063/1.96109
Abstract
We report on the influence of low-energy Si+ ions on the incorporation of Sb adatoms existing on growing (100) Si molecular beam epitaxy layers. At a growth temperature of 650 °C employed for these experiments an increase of incorporation of about three orders of magnitude compared to the spontaneous incorporation is obtained at ion flux densities of typically 1012 cm−2 s−1. Dopant activation coefficients of almost unity are established up to 1019 cm−3. The number of incorporated adatoms is found to increase proportionally with preadjusted adatom density as well as with Si+ ion dose. At an ion energy of 500 eV the constant of proportionality is estimated to be σI =(5±2)×10−16 cm2.Keywords
This publication has 18 references indexed in Scilit:
- A semiempirical formula describing the recoil yield in siliconApplied Physics A, 1984
- Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstructionApplied Physics Letters, 1984
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Kinetics of Antimony Doping in Silicon Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1983
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Si–MBE: Growth and Sb dopingJournal of Vacuum Science and Technology, 1979
- Recoil implantation from thin surface films on siliconRadiation Effects, 1978
- Recoil implantation from a thick film sourceRadiation Effects, 1978
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- Recoil implantation from a thin source: I. Underlying theory and numerical resultsSurface Science, 1976