Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy
- 1 March 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (3R)
- https://doi.org/10.1143/jjap.22.423
Abstract
A new kinetic model for Sb doping into the Si MBE layer is proposed. In this model, Sb doping steps are assumed as follows: a fraction of impinging Sb4 molecules adsorbs on the growing Si surface (adlayer) and monoatomic Sb desorbs from the adlayer into vapor; a fraction of monoatomic Sb in the adlayer is incorporated into the bulk, so that surface-concentration of Sb atoms may be in equilibrium with bulk-concentration of Sb. According to this model, calculated results successfully represent the present experimental data on relations between incident Sb4 flux, Sb concentration in the adlayer and that in bulk. As a result, it is indicated that doping levels in MBE layers are uniquely determined by Sb concentration in the adlayer, and not by Sb4 flux/Si flux ratio, when Si growth rate is lower than 1 Å/s.Keywords
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