Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy
- 1 September 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5608-5613
- https://doi.org/10.1063/1.329494
Abstract
We find that heavy adsorbed dopant layers, up to several tens of equivalent monolayers, can be made to produce heavily doped n (Sb) and p (Ga) layers in molecular beam epitaxy grown silicon. By preadjusting the adlayer concentration to the required value while temporarily arresting silicon growth, arbitrarily sharp profiles of any sequence of dopant type with very high or low levels can be grown. Examples are given of p+ i p+ and n++p+ pp+ structures grown with transition thickness L?300 Å, and with controlled layer thicknesses of ∼1000 Å. Such structures, difficult to achieve otherwise, should be ideal for fabrication of high-frequency millimeter wave devices.This publication has 13 references indexed in Scilit:
- Diffusion of gallium in siliconJournal of Applied Physics, 1980
- Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Improved molecular-beam epitaxial GaAs power FET’sJournal of Applied Physics, 1980
- Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)Applied Physics Letters, 1980
- Si–MBE: Growth and Sb dopingJournal of Vacuum Science and Technology, 1979
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Surface segregation of Sn during MBE of n-type GaAs established by SIMS and AESJournal of Vacuum Science and Technology, 1978
- Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping ControlJournal of the Electrochemical Society, 1977
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975