Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)
- 1 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (3) , 210-211
- https://doi.org/10.1063/1.91428
Abstract
Nonvolatile SiO2 on Si is reduced to elemental Si and to volatile SiO, by exposing the oxidized Si to an atomic Ga beam in vacuum, at a temperature as low as 800 °C. The SiO and the Ga2O form in the process, and the excess Ga evaporates at this temperature, leaving behind a clean and damage‐free surface.Keywords
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