Analysis techniques of charging damage studied on three different high-current ion implanters
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 563-567
- https://doi.org/10.1016/0168-583x(89)90247-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Charge generation in thin SiO2 polysilicon-gate MOS capacitorsSolid-State Electronics, 1987
- A study of wafer and device charging during high current ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985