A study of wafer and device charging during high current ion implantation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1) , 360-365
- https://doi.org/10.1016/0168-583x(87)90857-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductorsSolid-State Electronics, 1985
- A new dose control technique for ion implantationNuclear Instruments and Methods in Physics Research, 1981
- High current dosimetry techniquesRadiation Effects, 1979
- Radio-frequency pulse discharge for investigating reactions in electrical dischargesJournal of Physics D: Applied Physics, 1976