Ordered structure at Si/Ge interfaces
- 16 May 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (20) , 3198-3201
- https://doi.org/10.1103/physrevlett.72.3198
Abstract
We have determined a 2×1 ordered Si/Ge interfacial structure on an atomic scale, using grazing incidence x-ray diffraction and high-resolution transmission electron microscopy, and show that the structure differs from previously proposed models that use an atom pump mechanism. The observed structure indicates that atomic replacement during formation of the ordered structure is mainly caused by Ge surface segregation, while atomic-scale strain due to the 2×1 surface reconstruction determines the atomic configuration of the ordered structure.Keywords
This publication has 26 references indexed in Scilit:
- Ge segregation at Si-Ge (001) stepped surfacesPhysical Review B, 1993
- Critical test of the structure of the ordered phase in epitaxially grown filmsPhysical Review B, 1993
- Interplay between evolving surface morphology, atomic-scale growth modes, and ordering during epitaxyPhysical Review Letters, 1993
- Step-driven lateral segregation and long-range ordering during epitaxial growthPhysical Review Letters, 1992
- Direct imaging of interfacial ordering in ultrathin ( superlatticesPhysical Review Letters, 1991
- Surface-stress-induced order in SiGe alloy filmsPhysical Review Letters, 1990
- Long-range order in thick, unstrainedepitaxial layersPhysical Review Letters, 1990
- Chemical ordering and boundary structure in strained-layer Si-Ge superlatticesPhysical Review Letters, 1989
- Ordering in Si1−xGex crystalsSolid State Communications, 1987
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985