Ge segregation at Si-Ge (001) stepped surfaces
- 15 April 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (15) , 9931-9932
- https://doi.org/10.1103/physrevb.47.9931
Abstract
Atomistic calculations using the Stillinger-Weber and Tersoff interatomic potentials are used to study the energetics of Si-Ge interchange at Si step edges on (001) Ge surfaces. The calculations indicate that Ge segregation at rebonded step edges is energetically favored. This is consistent with the Ge-pump model of Jesson, Pennycook, and Baribeau [Phys. Rev. Lett. 66, 750 (1991)].
Keywords
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