19F range-energy curve in Si from 100 to 550 keV

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Abstract
The range statistics for C, F, Ne, Al, and Si in Si recently published by Gibbons, Johnson, and Mylroie (GJM) are significantly different from the predictions of the LSS theory. This difference exists because in their calculation GJM made use of measured electronic stopping powers (Se) for channeled ions. The scaling procedure employed by GJM builds into their calculation the pronounced Z1 oscillations observed in the Se of channeled ions. Use of the measured electronic stopping powers was limited to N, O, P, Cl, Ar, and the above mentioned ions in Si. In order to make an experimental check of the scaling procedure employed the range‐energy curve for 19F in Si has been measured between 100 and 550 keV. The following observations can be made: (1) The experimental range‐energy curve for 19F is in good agreement with LSS calculations and (2) the measured ranges are significantly less than the predictions of Gibbons, Johnson, and Mylroie. These results are interpreted as strong evidence against the validity of scaling Eisen’s measurements of the electronic stopping power for channeled ions over to random trajectories.