Dielectric Theory of Impurity Binding Energies. II. Donor and Isoelectronic Impurities in GaP

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Abstract
The dielectric theory of chemical shifts based on valence-bond mismatch in the central cell applied in paper I to donor impurities in Si and Ge is here extended to donor and isoelectronic impurities in GaP. With one adjustable parameter, chemical shifts relative to Te of S and Se donor impurities in GaP are satisfactorily explained, as is the shift in binding energy of isoelectronic N impurities on replacing the GaP host lattice by GaAs. The good internal consistency found in the model provides strong support for the concept of valencebond mismatch.