THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS-RICH GALLIUM ARSENIDE PHOSPHIDE
- 1 April 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (7) , 210-212
- https://doi.org/10.1063/1.1652781
Abstract
The localization energy of excitons at N isoelectronic substituents in GaAsxP1−x has been determined from optical absorption spectra for x ≲ 0.2. The results indicate that the binding energy of the N‐induced electron state associated with the X1 conduction band minima in GaAs may be relatively large, ∼0.08 eV. However, this state is still more than 0.3 eV above the lowest minimum at Γ1c. It is likely that there is no bound state associated directly with the Γ1 conduction band minimum.Keywords
This publication has 8 references indexed in Scilit:
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium ArsenidePhysical Review B, 1968
- Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agentJournal of Crystal Growth, 1968
- Dielectric Definition of ElectronegativityPhysical Review Letters, 1968
- Optical Properties of Tellurium as an Isoelectronic Trap in Cadmium SulfideJournal of Applied Physics, 1968
- Rotational Instability in a Penning-Type DischargePhysical Review Letters, 1965
- RECOMBINATION SCHEME AND INTRINSIC GAP VARIATION IN GaAs1−x−Px SEMICONDUCTORS FROM ELECTRON BEAM AND p-n DIODE EXCITATIONApplied Physics Letters, 1964
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964