Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agent
- 1 April 1968
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 2 (2) , 61-68
- https://doi.org/10.1016/0022-0248(68)90044-4
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The Reaction of GaP(s) with H[sub 2]O(g) and the Range of Stability of GaP(s) under Pressures of Ga[sub 2]O and P2Journal of the Electrochemical Society, 1964
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963
- A New Method of GaP GrowthJournal of the Electrochemical Society, 1963
- Crystal Habits of GaAs and GaP Grown from the Vapor PhaseJournal of Applied Physics, 1962
- Preparation of Epitaxial GaAs and GaP Films by Vapor Phase ReactionJournal of the Electrochemical Society, 1962
- Vapor Phase Preparation of Gallium Phosphide CrystalsJournal of the Electrochemical Society, 1961
- The Preparation and Floating Zone Processing of Gallium PhosphideJournal of the Electrochemical Society, 1961
- Vapor Phase Growth of Gallium Arsenide CrystalsJournal of the Electrochemical Society, 1961
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959