Self-starting soliton modelocked Ti-sapphire laserusing athin semiconductor saturable absorber
- 16 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (4) , 287-289
- https://doi.org/10.1049/el:19950184
Abstract
Using a 15 nm-thick antireflection-coated GaAs absorber layer on an AlGaAs/AlAs Bragg mirror as a nonlinear reflector, we achieved self-starting passive modelocking of a Ti-sapphire laser with 34 fs pulses without Kerr lens modelocking.Keywords
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