A SIMS study of ion beam induced migration of nitrogen in thermally oxidized silicon
- 1 May 1986
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 25 (4) , 391-400
- https://doi.org/10.1016/0169-4332(86)90083-8
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High-temperature rapid thermal nitridation of silicon dioxide for future VLSI applicationsIEEE Electron Device Letters, 1985
- Heating silicon dioxide at 950–1050 °C in the presence of an NH3+CF4 plasmaJournal of Applied Physics, 1984
- X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2Applied Physics Letters, 1984
- Projected range and straggling measurements of low energy nitrogen in siliconRadiation Effects, 1983
- Element‐Specific broadening effects in SIMS depth profiling of light impurities implanted in siliconSurface and Interface Analysis, 1982
- Deuterium at the Si-SiO2 interface detected by secondary-ion mass spectrometryApplied Physics Letters, 1981
- Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia GasJournal of the Electrochemical Society, 1980
- Charging effects in the secondary ion mass spectrometric analysis of targets containing low-conductivity regionsJournal of Applied Physics, 1980
- Evaluation of a cesium positive ion source for secondary ion mass spectrometryAnalytical Chemistry, 1977
- Comparative study of Si(111), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spectroscopy (SIMS)Thin Solid Films, 1975