Effect of light-induced defects on the short wavelength quantum efficiencies of amorphous silicon solar cell structures
- 15 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (8) , 4219-4222
- https://doi.org/10.1063/1.342485
Abstract
Light‐induced defects in intrinsic hydrogenated amorphous silicon (a‐Si:H) are found to have a large effect on the short wavelength quantum efficiencies (SWQE) of a‐Si:H solar cell structures. The dependence of SWQE on cell structure thickness, volume absorbed bias illumination, and externally applied voltage has been studied. The results on thick cell structures (≳0.5 μm) can be explained by a simple model which yields light‐induced defects with hole capture cross sections of about 10−11 –10−12 cm2 and densities consistent with other measurements.This publication has 9 references indexed in Scilit:
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