Internal photoemission in hydrogenated amorphous-Si films
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 96-98
- https://doi.org/10.1063/1.91717
Abstract
Measurements of internal photoemission from metal contacts into amorphous SiHx are reported. The height of the barriers at Cr, Pd, and Pt contacts were found to be 0.83, 0.98, and 1.12 eV, respectively, from the photoemission threshold.Keywords
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