Thermal generation currents in hydrogenated amorphous silicon p-i-n structures
- 24 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (13) , 1334-1336
- https://doi.org/10.1063/1.103475
Abstract
Dark conductivity in amorphous silicon p‐i‐n devices arising from thermal generation through bulk defect states is explored. The current decays slowly after a voltage is applied, due to depletion of charge from the undoped layer, and is voltage dependent due to a field‐enhanced generation rate. Creation of metastable bulk defects by light soaking reversibly increases the current. The steady‐state generation current is dervied from the measured relaxation time and depletion charge.Keywords
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