Material Parameters in a Thick Hydrogenated Amorphous Silicon Detector and their Effect on Signal Collection
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Signal generation in a hydrogenerated amorphous silicon detectorIEEE Transactions on Nuclear Science, 1989
- Detection of charged particles in amorphous silicon layersNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Disorder effects on deep trapping in amorphous semiconductorsPhilosophical Magazine Part B, 1984
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Measurements of depletion layers in hydrogenated amorphous siliconPhysical Review B, 1983
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982