Low-Temperature Diffusion of Dopants in Silicon
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in SiApplied Physics Letters, 1989
- Defect annihilation in shallow p+ junctions using titanium silicideApplied Physics Letters, 1987
- Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlaysApplied Physics Letters, 1987
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Microscopic Theory of Impurity-Defect Reactions and Impurity Diffusion in SiliconPhysical Review Letters, 1985
- Dopant Redistribution During Silicide FormationMRS Proceedings, 1985
- Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formationPhysical Review B, 1984
- Atom Currents Generated by Vacancy WindsPublished by Elsevier ,1975
- The Interactions of Point Defects with Impurities in SiliconJournal of the Physics Society Japan, 1969