Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si
- 27 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (9) , 843-845
- https://doi.org/10.1063/1.100863
Abstract
We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self-interstitials or vacancies, it is established that under equilibrium conditions at 1050 °C Ge diffusion takes place by both substitutional-interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self-diffusion are correct, our findings support the idea that Si self-diffusion takes place by both interstitial and vacancy mechanisms.Keywords
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