Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si

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Abstract
The effect of thermal nitridation on impurity diffusion and Oxidation induced Stacking Fault size in Si are clarified by selective nitridation. Enhanced B and P diffusion, retarded Sb diffusion, and growth of OSF’s are found in Si masked with SiO2 films. Retarded B and P diffusion, enhanced Sb diffusion and rapid OSF shrinkage are found in nonmasked Si that has undergone NH3 heat treatment. On the other hand, in N2 or N2+H2 (1:3) ambients, no significant ambient effect on impurity diffusion is found in Si masked with SiO2 films. However, retarded B and P diffusion and enhanced Sb diffusion are found in nonmasked Si with N2 ambient. The results are shown to be consistent with the model that shows that interstitials and vacancies effect thermal equilibrium.

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